SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing device capable of improving a selection ratio of selective etching.SOLUTION: A substrate processing method includes the steps of: removing moisture from a substrate; supplying a silylation agent to the substrate after the moisture removal step; and supplying an etching agent to the substrate after the silylation step (etching step). The substrate may have a surface on which a nitride film and an oxide film are exposed. In this case, the etching step may be a selective etching step which selectively etches the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component.