| 摘要 |
<p>An integrated circuit on a semiconductor substrate has logic gates comprising FDSOI-type transistors made on said substrate, including at least one first transistor comprising a gate with a first work function, and including a transistor comprising a second work function, a memory including memory cells, each memory cell comprising FDSOI type transistors, including at least one third nMOS transistor with a gate presenting a third work function, the third transistor comprising a buried insulating layer and a ground plane at least one fourth pMOS transistor with a gate presenting said third work function, the fourth transistor comprising a buried insulating layer and a ground plane, the ground planes of the third and fourth transistors being made in a same well separating these ground planes from said substrate.</p> |
