SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device using an oxide semiconductor, which can achieve stable electrical characteristics and high reliability.SOLUTION: A manufacturing processes of a semiconductor device including a bottom-gate transistor which has an oxide semiconductor layer comprises: forming a source electrode layer and a drain electrode layer in the island-like oxide semiconductor layer which overlaps a gate electrode layer; and subsequently performing a heat treatment under reduced pressure and at a temperature of hydrogen or a hydrogen compound being removed from the oxide semiconductor layer or at a temperature more than the hydrogen removal temperature.