SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which one-chip IGBT and a diode have good properties.SOLUTION: A semiconductor device according to an embodiment comprises: an IGBT cell and a diode cell which are formed on one semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed in the IGBT cell region of a surface layer part of the semiconductor substrate on a lower surface side; a second semiconductor layer of a first conductivity type which is formed in a region next to the IGBT cell region of a surface layer part of the semiconductor substrate on the lower surface side; gate electrodes which are formed on a surface layer part of the semiconductor substrate on an upper surface side leaving a predetermined interval between the gate electrodes; a third semiconductor layer of the first conductivity type and a fourth semiconductor layer of the second conductivity type which are formed between the gate electrodes; a fifth semiconductor layer of the first conductivity type which is formed in the IGBT cell region above the first semiconductor layer; a first electrode formed on the third semiconductor layer and the fourth semiconductor layer; and a second electrode formed on the semiconductor substrate on the lower surface side.