发明名称 |
METHOD OF CHANGING REFLECTANCE OR RESISTANCE OF A REGION IN AN OPTOELECTRONIC MEMORY DEVICE |
摘要 |
A method for changing reflectance or resistance of a region in an optoelectronic memory device. Changing the reflectance of the region includes sending an electric current through the region to cause a reflectance change in the region. Changing the resistance of the region includes: projecting a laser beam at a first beam intensity on the region, resulting in the region changing from a first to a second different resistance value; electrically reading the second resistance value during which an optical signal carried by the laser beam has a first digital value; after electrically reading the second resistance value, the laser beam is projected at a second beam intensity on the region resulting in the region changing from the second to the first resistance value; and electrically reading the first resistance value of the region while the laser beam is being projected on the region at the second beam intensity.
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申请公布号 |
US2013258765(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201313765772 |
申请日期 |
2013.02.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN FEN;KONTRA RICHARD STEVEN;LEE TOM C.;LEVIN THEODORE M.;MUZZY CHRISTOPHER DAVID;SULLIVAN TIMOTHY DOOLING |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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地址 |
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