GALLIUM NITRIDE-BASED LIGHT-EMITTING DIODE

摘要

A gallium nitride-based light-emitting diode is disclosed. The light-emitting diode includes: a gallium nitride substrate; a first gallium nitride-based semiconductor layer that is located on the gallium nitride substrate; a second gallium nitride-based semiconductor layer that is located on the first semiconductor layer; an active layer having a multiple quantum well structure that is located between the first semiconductor layer and the second semiconductor layer; and a gallium nitride-based electron blocking layer that is located between the active layer and the second semiconductor layer. Furthermore, the first semiconductor layer has a thickness of 5 mum to 15mum, and the electron blocking layer is a four-component gallium nitride-based semiconductor layer that contains aluminum and indium. It is possible to reduce forward voltage and improve light-emitting efficiency by increasing the relative thickness of the first semiconductor layer.