发明名称 MEMS DEVICE AND PROCESS FOR PRODUCING SAME
摘要 <p>Provided are an MEMS device in which a plurality of through-holes can be arranged at a high density and an end portion of each through-hole has a tapered shape and a process for producing the MEMS device. Through-holes in which the sidewalls are vertical and the bottom parts taper are provided through processing comprising: a step in which a silicon substrate having a flat surface comprising a (100) crystal plane is patterned to dispose quadrilateral areas of desired dimensions thereon and the areas are etched to a desired depth by dry etching that is capable of processing in a high aspect ratio; and a step in which anisotropic wet etching is conducted with an aqueous potassium hydroxide solution with which isopropyl alcohol has been mixed.</p>
申请公布号 WO2013145287(A1) 申请公布日期 2013.10.03
申请号 WO2012JP58659 申请日期 2012.03.30
申请人 HITACHI, LTD.;KANAMARU MASATOSHI;AONO TAKANORI;SUZUKI KENGO 发明人 KANAMARU MASATOSHI;AONO TAKANORI;SUZUKI KENGO
分类号 B81B1/00;B81C1/00 主分类号 B81B1/00
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