SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

摘要

Provided is a semiconductor device manufacturing method wherein, at the time of forming a film on a substrate at a low temperature, fine patterning is performed by improving film qualities. This semiconductor device manufacturing method has: a step wherein a film is formed on a substrate by alternately supplying at least a raw material gas and a reaction gas to the substrate, while maintaining the substrate at a first temperature by heating the substrate; and a step wherein, while naturally cooling the substrate having the film formed thereon to a second temperature that is lower than the first temperature in a state wherein the substrate is not heated, the film is modified by supplying a plasma-excited modification gas to the substrate having the film formed thereon.