| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET drive circuit and an FET module, which have high resistance to surge.SOLUTION: An FET drive circuit comprises: an FET; and a first circuit including a first rectifier cell, a second rectifier cell and a capacitative element which are sequentially connected in series from a drain toward a gate of the FET. The first rectifier cell has a forward characteristic with respect to a current flowing from the drain toward the gate. The second rectifier cell has a rectifying characteristic to be subject to breakdown at a predetermined voltage with respect to a current flowing form the drain to the gate. The FET drive circuit further comprises: resistance connected between a node of the first circuit, the second rectifier cell and the capacitative element, and a power supply; and a third rectifier cell connected between a source and the gate of the FET. |
