发明名称 FLUORINE RESIN SUBSTRATE
摘要 <p>According to a fluorine resin substrate of the present invention, a dielectric layer whose main component is fluorine resin is formed on a metal conductor, the generation of warp during reflow is sufficiently suppressed, and sufficiently excellent high frequency characteristics can be achieved. Provided is a fluorine resin substrate whose dielectric layer contains hollow glass beads, a fluorine resin substrate in which the metal conductor has a surface roughness (Rz) of 2.0 mum or less, a fluorine resin substrate in which fluorine resin is irradiated with ionizing radiation with an irradiation dose of between 0.01 kGy and 500 kGy, and a fluorine resin substrate in which fluorine resin is one or more of polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (FEP), and tetrafluoroethylene-ethylene copolymer (ETFE).</p>
申请公布号 WO2013146667(A1) 申请公布日期 2013.10.03
申请号 WO2013JP58551 申请日期 2013.03.25
申请人 SUMITOMO ELECTRIC FINE POLYMER, INC. 发明人 NAKABAYASHI, MAKOTO;IKEDA, KAZUAKI
分类号 H05K1/03 主分类号 H05K1/03
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