发明名称 |
TRENCH MOSFET WITH SHIELDED ELECTRODE AND AVALANCHE ENHANCEMENT REGION |
摘要 |
A trench MOSFET with shielded electrode and improved avalanche enhancement region is disclosed. The inventive structure can achieve a better avalanche capability by applying an improved avalanche enhancement region having a same doping concentration as the epitaxial layer where said trench MOSFET is formed without increasing Rds.
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申请公布号 |
US2013256786(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213433627 |
申请日期 |
2012.03.29 |
申请人 |
HSIEH FU-YUAN;FEEI CHERNG ENTERPRISE CO., LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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