SUBSTRATE FOR MASK BLANK, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a substrate for a mask blank for use in lithography, configured so that, in the relationship between the bearing area (%) and the bearing depth (nm) as obtained by measuring with an atomic force microscope a 1 µm × 1 µm region on a primary surface of the substrate on which a transfer pattern is formed, if a bearing area of 30% is defined as BA30, a bearing area of 70% as BA70, and bearing depths corresponding to bearing areas of 30% and 70% as BD30 and BD70, respectively, the primary surface of the substrate satisfies the relational expression (BA70 - BA30) / (BD70 - BD30) >= 350 (%/nm), and the maximum height is (Rmax) <= 1.2 nm.