| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for optical semiconductor device having an extremely excellent reflectance from the near-ultraviolet range to the visible light range (wavelength 340-800 nm), in a lead frame for optical semiconductor device used for an LED, a photocoupler, a photo-interrupter, and the like, and to provide a lead frame using the substrate, and a manufacturing method therefor.SOLUTION: In the lead frame for optical semiconductor device provided, on the surface of a substrate 1 for lead frame, with a reflective layer 2 consisting of a silver or silver alloy film having a thickness of 3 μm or less, preferably, and formed by rolling, the glossiness on the surface of the substrate, measured at an incident angle of 60° conforming to JISZ8741 is 500% or more in a direction parallel with the rolling direction and a direction perpendicular thereto, and the ratio of glossiness in the parallel direction and perpendicular direction is 0.8-1.2. |
