发明名称 |
POWER MODULE MANUFACTURING METHOD AND POWER MODULE |
摘要 |
PROBLEM TO BE SOLVED: To provide a power module manufacturing method and a power module, which uses a lead-free bonding technology supporting good radiation performance and good bondability at a substrate bonded part at the same time.SOLUTION: A semiconductor module manufacturing method comprises: bonding semiconductor elements 1 and 2 to a ceramic substrate 5 having solid Cu wires by sintered Ag paste 4 so as to make a porosity of a porous Ag layer be not less than 5% and less than 30%; and subsequently, performing hydrogen reduction and bonding the ceramic substrate 5 to a base 10 by an Sn-based solder 9 having a solidus temperature of 227°C and over. |
申请公布号 |
JP2013201330(A) |
申请公布日期 |
2013.10.03 |
申请号 |
JP20120069419 |
申请日期 |
2012.03.26 |
申请人 |
HITACHI LTD |
发明人 |
IKEDA YASUSHI;TEROUCHI TOSHIRO;MORITA TOSHIAKI |
分类号 |
H01L25/07;H01L21/52;H01L25/18 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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