发明名称 POWER MODULE MANUFACTURING METHOD AND POWER MODULE
摘要 PROBLEM TO BE SOLVED: To provide a power module manufacturing method and a power module, which uses a lead-free bonding technology supporting good radiation performance and good bondability at a substrate bonded part at the same time.SOLUTION: A semiconductor module manufacturing method comprises: bonding semiconductor elements 1 and 2 to a ceramic substrate 5 having solid Cu wires by sintered Ag paste 4 so as to make a porosity of a porous Ag layer be not less than 5% and less than 30%; and subsequently, performing hydrogen reduction and bonding the ceramic substrate 5 to a base 10 by an Sn-based solder 9 having a solidus temperature of 227°C and over.
申请公布号 JP2013201330(A) 申请公布日期 2013.10.03
申请号 JP20120069419 申请日期 2012.03.26
申请人 HITACHI LTD 发明人 IKEDA YASUSHI;TEROUCHI TOSHIRO;MORITA TOSHIAKI
分类号 H01L25/07;H01L21/52;H01L25/18 主分类号 H01L25/07
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