发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To remove a liquid sticking to a substrate, without damaging a pattern provided on the substrate, under an environment of a pressure which is lower than a pressure required for realizing a supercritical state.SOLUTION: An IPA liquid sticking to a surface of a substrate W is replaced with a liquid carbon dioxide LC, and then, the liquid carbon dioxide LC is phase-transformed to a solid carbon dioxide SC (solidification step), and further, the solid carbon dioxide is sublimated to carbon dioxide gas. Thus, no capillary force acts between patterns, and the substrate W can be dried while preventing falling of a pattern on the substrate surface. Further during the solidification step, normal temperature nitrogen gas GNn having a partial pressure equal to or more than the pressure of triple points of the carbon dioxide is supplied into a dry processing chamber 31 and is pressurized. Thus, a phase change can be stabilized when the liquid carbon dioxide LC on the substrate W is solidified, resulting in improved reliability of sublimation drying.
申请公布号 JP2013201302(A) 申请公布日期 2013.10.03
申请号 JP20120068944 申请日期 2012.03.26
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KITAGAWA HIROAKI
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
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