| 摘要 |
PROBLEM TO BE SOLVED: To provide a CBRAM having good rectification characteristics and high durability of switching characteristics.SOLUTION: A nonvolatile semiconductor memory device comprises a word line WL, a first electrode 3, an ion diffusion layer 2, a second electrode 1, and a bit line BL. The word line is composed of a conductive material. The first electrode is electrically connected to the word line. The ion diffusion layer is highly resistive and electrically connected to the first electrode on the side opposite to the word line. The second electrode is provided on the ion diffusion layer on the side opposite to the word line. When a positive voltage is applied to the first electrode, the second electrode supplies a metal into the ion diffusion layer. The bit line is electrically connected to the second electrode on the side opposite to the word line, and composed of a conductive material. The second electrode is composed of a metal supplied into the ion diffusion layer. The ion diffusion layer includes a first region 2a on the word line side, and a second region 2b which is adjacent to the first region and in which the metal is harder to diffuse than in the first region on the bit line side. |
