发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of diffusing an impurity of a desired concentration into a desired region with good controllability.SOLUTION: According to an embodiment, there is provided a nonvolatile semiconductor memory device in which a memory cell array layer CA11 in which a memory cell is formed on a semiconductor layer 11 serving as an active region and a memory cell array layer CA12 in which a memory cell is formed on a semiconductor layer 21 serving as the active region are laminated. The semiconductor layer 11 is disposed on a diffusion source layer 101 including an impurity atom which imparts conductivity to the semiconductor layer 11 via an insulating film 102. The semiconductor layer 21 is disposed on one principal surface of a diffusion source layer 112 including an impurity atom via an insulating film 111. |
申请公布号 |
JP2013201215(A) |
申请公布日期 |
2013.10.03 |
申请号 |
JP20120067723 |
申请日期 |
2012.03.23 |
申请人 |
TOSHIBA CORP |
发明人 |
SAKAGUCHI TAKESHI;ARAI FUMITAKA |
分类号 |
H01L21/336;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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