发明名称 |
MULTI-LANDING CONTACT ETCHING |
摘要 |
A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.
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申请公布号 |
US2013256787(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213433665 |
申请日期 |
2012.03.29 |
申请人 |
XIE FEI;TIEN WEN CHENG;CHEN YA PING;MAN LI BIN;CHEN KUO JUNG;LIU YU;ZHANG TIAN YI;XIE SISI;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
XIE FEI;TIEN WEN CHENG;CHEN YA PING;MAN LI BIN;CHEN KUO JUNG;LIU YU;ZHANG TIAN YI;XIE SISI |
分类号 |
H01L29/78;H01L21/283 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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