发明名称 READ VOLTAGE GENERATION CIRCUIT, MEMORY AND MEMORY SYSTEM INCLUDING THE SAME
摘要 A read voltage generation circuit includes a register unit configured to store an initial read voltage code, a counter circuit configured to change a read voltage code in every read-retry operation, wherein an initial value of the read voltage code is the initial read voltage code; and a voltage generation circuit configured to generate a read voltage corresponding to a read voltage code produced by the counter circuit.
申请公布号 US2013258778(A1) 申请公布日期 2013.10.03
申请号 US201313745272 申请日期 2013.01.18
申请人 SK HYNIX INC. 发明人 OH SEUNG-MIN
分类号 G11C16/26 主分类号 G11C16/26
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