发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.
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申请公布号 |
US2013260540(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213879371 |
申请日期 |
2012.02.23 |
申请人 |
NAKAZAWA HARUO;OGINO MASAAKI;KURIBAYASHI HIDENAO;TERANISHI HIDEAKI;FUJI ELECTRIC CO., LTD |
发明人 |
NAKAZAWA HARUO;OGINO MASAAKI;KURIBAYASHI HIDENAO;TERANISHI HIDEAKI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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