| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which is highly stable in operation, and a method of manufacturing the nonvolatile memory device.SOLUTION: According to an embodiment, a nonvolatile memory device comprising a first conductive part, a second conductive part, and a memory layer therebetween is provided. The memory layer contains a material expressed by (M1M2)xX+yα+z&bgr;, where M1 and M2 are each at least one selected from a group consisting of Mg, Al, Sc, Y, Ga, Ti, Zr, Hf, Si, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Ta, Mo, W, Ru, Rh, Ca, Sr, Ba and Ln; X is at least one of O and N; α is at least one of Li, Na, K, Rb, Cs and Fr; and &bgr; is at least one of F, Cl, Br and I. The composition ratio is as follows: 0.1≤x≤1.1, 0.0001≤y≤0.2, and 0.9≤y/z≤1.1. |
