发明名称 METHOD FOR APPLYING POWER TO TARGET MATERIAL, POWER SUPPLY FOR TARGET MATERIAL, AND SEMICONDUCTOR PROCESSING APPARATUS
摘要 A method for applying power to target material in a magnetron sputtering process is provided. The method includes: 10) connecting a main power supply and a maintaining power supply to the target material (2) respectively; 20) applying a particular main power in the form of pulses to the target material (2) by the main power supply; applying a particular maintaining power which is smaller than the main power to the target material (2) by the maintaining power supply at least during the pulse interval time (t2) of the main power supply, so as to maintain a glow discharge procedure of the sputtering process during the purse interval time (t2) of the main power supply. The method for applying power to target material can obviously enhance the metal ionization rate while the process stability and controllability are guaranteed. A power supply for target material (8) which includes a main power module (81) and a maintaining power module (82), and a semiconductor processing apparatus using the method for applying power to target material or the power supply for target material are also provided.
申请公布号 US2013256119(A1) 申请公布日期 2013.10.03
申请号 US201013378936 申请日期 2010.12.17
申请人 YANG BAI;XIA WEI;BEIJING NMC CO., LTD. 发明人 YANG BAI;XIA WEI
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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