发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.
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申请公布号 |
US2013256650(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213481856 |
申请日期 |
2012.05.27 |
申请人 |
YANG CHIH-CHUNG;CHEN HORNG-SHYANG;TING SHAO-YING;LIAO CHE-HAO;CHEN CHIH-YEN;HSIEH CHIEH;CHEN HAO-TSUNG;YAO YU-FENG;YEH DONG-MING;NATIONAL TAIWAN UNIVERSITY |
发明人 |
YANG CHIH-CHUNG;CHEN HORNG-SHYANG;TING SHAO-YING;LIAO CHE-HAO;CHEN CHIH-YEN;HSIEH CHIEH;CHEN HAO-TSUNG;YAO YU-FENG;YEH DONG-MING |
分类号 |
H01L33/28;H01L33/26;H01L33/32;H01L33/34 |
主分类号 |
H01L33/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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