发明名称 |
SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMITTER CONTACT |
摘要 |
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
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申请公布号 |
US2013260526(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213605253 |
申请日期 |
2012.09.06 |
申请人 |
CAI JIN;CHAN KEVIN K.;D'EMIC CHRISTOPHER P.;NING TAK H.;PARK DAE-GYU;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAI JIN;CHAN KEVIN K.;D'EMIC CHRISTOPHER P.;NING TAK H.;PARK DAE-GYU |
分类号 |
H01L21/8222 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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