MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSPARENT MASK BLANK, REFLECTING MASK, TRANSPARENT MASK, AND REFLECTING MASK AND SEMICONDUCTOR FABRICATION METHOD

摘要

Provided is a mask blank substrate which is used in lithography, in which a primary surface of a side of the substrate whereon a mask pattern is formed has a root mean square coarseness (Rms), which is obtained by measuring a 1µm×1µm region with an atomic force microscope, of 0.15nm or less, and a power spectrum density of 10nm4 or less at a spatial frequency of 1µm-1 or more.