Semiconductor Fabrication Utilizing Grating and Trim Masks

摘要

Disclosed are a method for fabricating a semiconductor device and the associated semiconductor structure. The method includes exposing a photoresist layer disposed on a semiconductor wafer utilizing a grating mask having a plurality of grating lines to produce exposed lines and unexposed lines in the photoresist layer. The method further includes exposing the photoresist layer utilizing a trim mask having a blocking portion situated over a selected one of the unexposed lines. The photoresist layer may be developed after exposing the photoresist layer utilizing the trim mask. A line may then be etched into the semiconductor wafer where the selected one of the unexposed lines was blocked by the blocking portion of the trim mask. The width of the unexposed lines may be controlled by adjusting an exposure time or an exposure power for the photoresist layer while utilizing the grating mask.