发明名称 AMOLED WITH N-TYPE TFT
摘要 A stratified organic light-emitting diode structure includes a thin-film transistor and an organic light-emitting diode (OLED). The OLED is fabricated on a planarization layer that has a top surface substantially parallel to the substrate, and the layers in the organic light-emitting diode (OLED) are substantially parallel to each other. The major part of each OLED layer has a uniform thickness so that the OLED produces a uniform brightness. The planarization layer covers the thin-film transistor entirely and the planarization layer on top of the thin-film transistor is also covered by an insulation layer. In order to electrically connect the top electrode of the OLED to the drain terminal of the thin-film transistor, an opening is made through both the top insulating layer and the planarization layer to expose part of the drain terminal. Spacers with uniform height are fabricated on the top insulating layer to protect the pixel structure.
申请公布号 US2013256703(A1) 申请公布日期 2013.10.03
申请号 US201213438071 申请日期 2012.04.03
申请人 HSIEH HSING-HUNG;AU OPTRONICS CORPORATION 发明人 HSIEH HSING-HUNG
分类号 H01L51/52;H01L51/56 主分类号 H01L51/52
代理机构 代理人
主权项
地址