| 摘要 |
A semiconductor device includes: a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first semiconductor layer; an insulating film including a first insulating film formed over the second semiconductor layer, a second insulating film, and a third insulating film stacked sequentially over the first insulating film, and an electrode formed over the insulating film, wherein, in the first insulating film, a region containing halogen ions is formed under a region provided with the electrode, and the third insulating film contains a halogen. |
