| 摘要 |
<p>In the present invention, a melt of a metallic oxide containing titanium and niobium as components and having oxygen defects is used to constitute a thin-film-forming vapor-deposition material. It is preferable to use 2-16 mol% of niobium as a dopant to ensure high translucency while yielding a prominent antistatic property through raising the electroconductivity above that obtained with 100% titanium oxide. Moreover, using an oxygen-deficient metallic oxide instead of a complete oxide and forming a material from a niobium-doped metallic oxide using a melt instead of a sintered compact yields a material having a non-anatase structure and substantially eliminates changes in the characteristics of the resulting film even if a new material is used to replenish residual material following vapor deposition.</p> |
