| 摘要 |
<p>A first semiconductor region (FD1) is disposed inside of a charge generating region such that the first semiconductor region is at the center portion of a pixel region (PA1), and is surrounded by the charge generating region, and the first semiconductor region collects signal charges from the charge generating region. A first gate electrode (TX1) is disposed between the first semiconductor region (FD1) and the charge generating region, and makes the signal charges from the charge generating region flow into the first semiconductor region (FD1) corresponding to signals inputted thereto. A fourth semiconductor region (SR) has a part thereof positioned at a corner portion of the pixel region (PA1), and the rest parts thereof positioned outside of the pixel region (PA1), said fourth semiconductor region having a conductivity type different from that of the first semiconductor region (FD1), and impurity concentration higher than that of the surrounding regions. A read-out circuit (RC1) is disposed in the fourth semiconductor region (SR), and reads out signals that correspond to the quantity of the charges accumulated in the first semiconductor region (FD1).</p> |
