| 摘要 |
<p>In order to suppress fluctuations in gate voltage and enhance reliability of operation of parallel-connected power semiconductor elements, the present invention is an electric power conversion device for controlling parallel-connected power semiconductor elements (21), using individual gate drive circuits (30AU, 30BU). The gate drive devices (30AU, 30BU) are configured so that gate current return paths of the parallel-connected power semiconductor elements (21) are separated from each other.</p> |
