| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory and a method for reading out from it that can prevent read disturbance.SOLUTION: A magnetic memory of an embodiment comprises a memory cell including: a first MTJ element comprising a first storage layer including a magnetic layer having direction variable magnetization, a first reference layer including a magnetic layer having direction invariable magnetization, and a first tunnel barrier layer provided between the first storage layer and the first reference layer; and a second MTJ element comprising a second storage layer including a magnetic layer having direction variable magnetization and magnetically coupling with the first storage layer, a second reference layer including a magnetic layer having direction invariable magnetization parallel to the magnetization of the first reference layer, and a second tunnel barrier layer provided between the second storage layer and the second reference layer, and arranged in parallel to the first MTJ element in the direction orthogonal to the lamination direction of the layer of the first MTJ element. |
