SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device having low wiring resistance.SOLUTION: A semiconductor storage device comprises a cell array layer including first wiring, memory cells stacked on the first wiring and second wiring formed on the memory cells so as to be orthogonal to the first wiring. The first wiring includes a level difference in top face which is lower from a memory cell array region in which memory cell arrays are formed to a peripheral region around the memory cell array region.