| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction field-effect transistor that improves a manufacturing margin of a threshold voltage and includes a reverse-conductive diode, and a manufacturing method of the junction field-effect transistor.SOLUTION: There is provided a junction field-effect transistor including a first-conductivity-type semiconductor substrate, a first-conductivity-type drift layer, a second-conductivity-type gate region, a first-conductivity-type channel layer, a first-conductivity-type source region, a source electrode, a drain electrode, a second-conductivity-type gate contact layer, and a gate electrode. The first-conductivity-type drift layer is provided on a first primary surface of the first-conductivity-type semiconductor substrate. The second-conductivity-type gate region is provided on a surface of the first-conductivity-type drift layer. The first-conductivity-type channel layer is provided on the first-conductivity-type drift layer and the second-conductivity-type gate region. The first-conductivity-type source region is provided on a surface of the first-conductivity-type channel layer so as to face the second-conductivity-type gate region. |
