| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device having large internal capacitance between a gate and an emitter (source).SOLUTION: A power semiconductor device includes: a first semiconductor layer 2 of a first conductivity type having a first trench 5; a second semiconductor layer 3 of a second conductivity type; a third semiconductor layer 4 of the first conductivity type; a fourth semiconductor layer 9 of the second conductivity type having a second trench 10; a gate electrode 7; and a conductor 12. The first trench 5 extends from a first surface to a second surface of the first semiconductor layer 2. The second trench 10 reaches the inside of the fourth semiconductor layer 9 from a surface of the fourth semiconductor layer 9. The gate electrode 7 is provided on the first semiconductor layer 2 in the first trench 5, the second semiconductor layer 3, and the third semiconductor layer 4 via a gate insulating film 6. The conductor 12 is provided on the first semiconductor layer 2 in the second trench 10 via an insulating film 11, and is electrically connected to the gate electrode 7. |
