发明名称 Method For Manufacturing A Light Emitting Diode
摘要 This invention is about a method to be used in the fabrication of an electroluminescent diode and a diode fabricated with this method. The temperatures needed for the crystalline LEDs produced presently under specified temperatures in a furnace, will be provided within the semiconductor by the Joule effect. As an alternative to the commercial LEDs, whose costs are suitable only when they are produced in the order of centimeters, our process renders the fabrication of LEDs over very large surfaces of the order of meters, with the temperature raised by applying electric current without any requirements of high temperature furnace treatments. The effects of the chemical processes experienced during the Joule heating are permanent and the diode is able to luminesce.
申请公布号 US2013260500(A1) 申请公布日期 2013.10.03
申请号 US201113992759 申请日期 2011.11.02
申请人 ANUTGAN MUSTAFA;KATIRCIOGLU BAYRAM;ANUTGAN TAMILA;ATILGAN ISMAIL 发明人 ANUTGAN MUSTAFA;KATIRCIOGLU BAYRAM;ANUTGAN TAMILA;ATILGAN ISMAIL
分类号 H01L33/00 主分类号 H01L33/00
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