发明名称 GaN-Based Quantum Dot Visible Laser
摘要 A III-nitride based quantum dot (QD) laser is formed of InGaN/GaN quantum dots and capable emitting at a single wavelength within the visible region, including the violet wavelength region (400-440 nm), the blue wavelength region (440-490 nm), the green wavelength region (490-570 nm), the yellow wavelength region (570-590 nm), the orange wavelength region (590-620 nm), and the red wavelength region (620-700 nm), with varying composition as described.
申请公布号 US2013259079(A1) 申请公布日期 2013.10.03
申请号 US201213721930 申请日期 2012.12.20
申请人 UNIVERSITY OF MICHIGAN THE REGENTS OF THE;THE REGENTS OF THE UNIVERSITY OF MICHIGAN 发明人 BHATTACHARYA PALLAB;ZHANG MENG
分类号 H01S5/30 主分类号 H01S5/30
代理机构 代理人
主权项
地址