VERTICAL, HIGH-VOLTAGE-RESISTANT SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING VERTICAL, HIGH-VOLTAGE-RESISTANT SEMICONDUCTOR DEVICE

摘要

A silicon-carbide-vertical MOSFET has: a first-conductive-type, N-type inversion layer (6) formed on a surface layer other than a second semiconductor-layer base layer selectively formed on a low-concentration layer formed on the surface of a substrate; a gate electrode layer formed, with a gate-insulating film interposed therebetween, on at least a section of an exposed surface section of a second-conductive-type third semiconductor layer, and between a first-conductive-type source region and the first-conductive-type, N-type inversion layer (6); and a commonly contacting source electrode positioned on the surfaces of the source region and the third semiconductor layer. Therein, parts of the second-conductive-type semiconductor layer are bonded in a region under the N-type inversion layer (6). As a result, it is possible, even when applying a high voltage, to prevent damage to an oxide film for forming a gate electrode and to improve reliability, while using the low-temperature resistance of a vertical SiC-MOSFET using SiC and the like as a semiconductor material.