| 摘要 |
<p>[Problem] To efficiently form an optimum projection/indentation shape for reducing generated light loss in a light-emitting layer. [Solution] The invention is a wafer processing method in which, on the basis of a mask (2) that has been patterned on a wafer that configures a film-for-etching (1), a surface portion of the film-for-etching (1) of the wafer is processed. In a single etching device, a mask processing step and a transfer etching step are performed, changing the type of a process gas and the pressure of the process gas. In said mask processing step, the mask (2) is processed into a projection shape that corresponds to a projection shape to be transferred to the film-for-etching (1). In said transfer etching step, on the basis of the processed mask shape, the mask shape is transferred to the surface portion of the film-for-etching (1).</p> |
