SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURED BY SAME

摘要

This silicon carbide semiconductor device manufacturing method is provided with: a step (A) wherein a first conductivity-type silicon carbide substrate (1) is prepared; a step (B) wherein a first conductivity-type epitaxial layer (2) is formed on one main surface of the first conductivity-type silicon carbide substrate (1); a step (C) wherein a first metal layer is formed on the other main surface of the first conductivity-type silicon carbide substrate (1); a step (D) wherein, after the step (C), the silicon carbide substrate is heat treated, an ohmic contact is formed between the first metal layer and the other main surface of the silicon carbide substrate, and a layer of a substance (10) having excellent adhesiveness with other metals is formed on the first metal layer; and a step (E) wherein, after the step (D), an impurity in the surface of the first metal layer (8) on the other main surface is removed and cleaned. The heat treatment in the step (D) is performed at a temperature of 1,100°C or higher.