SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device which is provided with: a p-type semiconductor layer (10); a pair of n-type impurity diffused regions (14) which are provided apart from each other in the surface portion of the semiconductor layer (10); a gate insulating film (11) which is provided on a region of the semiconductor layer (10), said region being sandwiched between the n-type impurity diffused regions (14); and a gate electrode (12) which is provided on the gate insulating film (11). The n-type impurity diffused regions (14) have two or more kinds of impurities. One of the two or more kinds of impurities is an element that is selected from the chalcogen group elements, and another is an n-type impurity.