| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer which makes possible to suppress the reduction in the efficiency of growth of a silicon monocrystalline ingot and the occurrence of slip dislocation in a thermal treatment, to reduce defects such as COP and BMD in a bulk part of the wafer and to suppress of the generation of a thermal donor, and which never restricts a thermal treatment member to be used in the thermal treatment to silicon.SOLUTION: The method comprises the steps of: preparing a disc-like wafer including a V-rich region by cutting a silicon monocrystalline ingot formed by CZ method, including a nitrogen-undoped, V-rich region and having an oxygen density of 0.8×10atoms/cmor less; planarizing the wafer; performing a thermal treatment which includes raising the temperature of the planarized wafer to a maximum achievable temperature of 1150-1250°C in an inert gas atmosphere with an oxygen partial pressure of 1-8%, and thereafter keeping the wafer at the maximum achievable temperature for 30 minutes to 2 hours with an oxygen partial pressure of 5-15% in the inert gas atmosphere; and finally mirror-polishing a surface of the wafer. |
