| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having high controllability.SOLUTION: A nonvolatile semiconductor memory device comprises a cell array layer having first wiring, memory cells laminated on the first wiring and second wiring formed on the memory cells so as to be perpendicular to the first wiring. A control circuit of the nonvolatile semiconductor memory device applies second voltages having polarities different from those of first voltages to the memory cells after verify read operation and prior to subsequent application of the first voltages while repeating operation for executing verify read for verifying that resistance values of the memory cells are lower than a predetermined resistance value until the resistance values of the memory cells are lower than the predetermined resistance value after applying the first voltages for setting to the memory cells when performing setting operation for setting the memory cells to low resistance states. |
