METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve yield by preventing an increase in electrical resistance of wiring due to disconnection of a barrier film at the bottom of an opening, and to reduce manufacturing cost as compared with a dual damascene process.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an interlayer insulating film on copper wiring formed on a surface of a semiconductor substrate; providing an opening reaching the copper wiring in the interlayer insulating film; and heat-treating the copper wiring to expand a material constituting the copper wiring, thereby filling the opening with the material.