| 摘要 |
A semiconductor device comprising a stacked layer memory block and associated peripheral circuits in stacked layer arrangements. Booster circuits in a variety of stacked layer arrangements are described. The booster circuit possesses plural rectifier cells that are series-connected and plural first capacitors. The plural first capacitors receive the first clock signal on one end, and the other ends are each connected to one end of different rectifier cells. The first capacitor is composed of capacities between plural first conductive layers that are arrayed with a set pitch perpendicularly to the substrate. One of the either even numbered or odd numbered first conductive layers is supplied with a first clock signal. The other of the either even numbered or odd numbered first conductive layers that line perpendicularly to the substrate is, individually, connected to one end of different rectifier cells.
|
