发明名称 |
OPTIMIZING LIGHT EXTRACTION EFFICIENCY FOR AN LED WAFER |
摘要 |
The present disclosure involves a method of fabricating a light-emitting diode (LED) wafer. The method first determines a target surface morphology for the LED wafer. The target surface morphology yields a maximum light output for LEDs on the LED wafer. The LED wafer is etched to form a roughened wafer surface. Thereafter, using a laser scanning microscope, the method investigates an actual surface morphology of the LED wafer. Afterwards, if the actual surface morphology differs from the target surface morphology beyond an acceptable limit, the method repeats the etching step one or more times. The etching is repeated by adjusting one or more etching parameters. |
申请公布号 |
US2013260484(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213431165 |
申请日期 |
2012.03.27 |
申请人 |
CHERN CHYI-SHYUAN;WU HSIN-HSIEN;YANG YUNG-HSIN;CHIU CHING-HUA;TSMC SOLID STATE LIGHTING, LTD. |
发明人 |
CHERN CHYI-SHYUAN;WU HSIN-HSIEN;YANG YUNG-HSIN;CHIU CHING-HUA |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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