发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING THE SAME
摘要 PROBLEM TO BE SOLVED: To apply a desired voltage to a selection word line by using coupling of a selection word line and a non-selection word line in both sides of the selection word line.SOLUTION: A semiconductor memory device includes: a plurality of first wires; a plurality of second wires; a memory cell formed in a region in which the first wires and the second wires cross; and a plurality of first drivers for applying a voltage to the first wires; and second drivers for applying a voltage to each of the first drivers. The second driver applies a first voltage to the first driver connected to the first wire to be selected, applies a second voltage equal to or higher than the first voltage to the first driver connected to the first wire adjacent to the first wire to be selected, and applies a fourth voltage which is lower than the first voltage and is higher than a third voltage to the first driver connected to the first wire adjacent to the first wire to be selected, when applying a third voltage lower than the first voltage to the first driver connected to the first wire to be selected.
申请公布号 JP2013200937(A) 申请公布日期 2013.10.03
申请号 JP20130055396 申请日期 2013.03.18
申请人 TOSHIBA CORP 发明人 SASAKI TAKAHIKO
分类号 G11C13/00 主分类号 G11C13/00
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