发明名称 SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a manufacturing method of a semiconductor device, and a substrate processing method which improve the process uniformity between multiple substrates.SOLUTION: A substrate processing apparatus includes: a processing chamber; a processing gas supply part; a substrate placement base where multiple placement parts, on which substrates are placed, are provided on the same flat surface; a heating part provided at the substrate placement base; a temperature detection part detecting a temperature of the substrate; and a placement mechanism sequentially placing the substrates on the multiple placement parts; and a control part performing control so that the substrate is placed on one placement part in a state that the substrates are placed on the multiple placement parts except the one placement part and processing sequence for processing the substrates is carried out after a temperature of the substrate placed on the one placement part becomes a predetermined temperature that is determined in advance.
申请公布号 JP2013201333(A) 申请公布日期 2013.10.03
申请号 JP20120069441 申请日期 2012.03.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MIYANISHI YUYA
分类号 H01L21/31;C23C16/02 主分类号 H01L21/31
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