DOUBLE-GATE ELECTRONIC MEMORY CELL AND METHOD OF MANUFACTURING SUCH A CELL

摘要

An electronic memory cell includes a first selection transistor gate surmounting a first part of the channel and a lateral spacer disposed against a lateral flank of the selection transistor gate, a part of the lateral spacer forming a memory transistor gate surmounting a second part of the channel. The memory transistor gate includes a stack of the ONO type and a conductive zone including a lateral face inclined at an angle alpha strictly between 0 and 90° with respect to the plane of the substrate.