NANOWIRE-BASED OPTOELECTRONIC SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE OF SUCH A STRUCTURE

摘要

The invention concerns an optoelectronic semiconductor structure (100) including a semiconductor substrate (110) including a first face (111), a nucleation layer (120) and a nanowire (160) in contact with the nucleation layer. The nucleation layer (120) covers a portion of the first face (111) which is called the "nucleation" face, and where the portion (114) of the first face (111) not covered by the nucleation layer (120) is called the "free" portion. The structure also includes a conducting layer (141) in contact with the free portion (114) of the substrate (110), where the said conducting layer is also in contact with the nanowire over the perimeter of the nanowire (160). The invention also concerns a method of manufacture of such a structure (100).